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S8050-HQ Datasheet
Datasheet specifications
| Datasheet's name | S8050-H |
|---|---|
| File size | 75.776 KB |
| File type | |
| Number of pages | 4 |
Download Datasheet S8050-H |
Download Datasheet |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Yangzhou Yangjie Elec Tech S8050-HQ
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 500mA
- Power Dissipation (Pd): 300mW
- Transition Frequency (fT): 150MHz
- DC Current Gain (hFE@Ic,Vce): 200@50mA,1V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 25V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@500mA,50mA
- Package: SOT-23-3L
- Manufacturer: Yangzhou Yangjie Elec Tech