HYG011N04LS1TA دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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HYG011N04LS1TA
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حجم فایل
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63.81
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
HUAYI HYG011N04LS1TA
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
250W
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Total Gate Charge (Qg@Vgs):
44nC@4.5V
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Drain Source Voltage (Vdss):
40V
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Input Capacitance (Ciss@Vds):
5.87nF@25V
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Continuous Drain Current (Id):
320A
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Gate Threshold Voltage (Vgs(th)@Id):
1.8V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
63pF@25V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
0.9mΩ@10V,50A
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Package:
TOLL
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Manufacturer:
HUAYI
