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SIRA26DP-T1-RE3 Datasheet
Datasheet specifications
| Datasheet's name | SIRA26DP-T1-RE3 |
|---|---|
| File size | 105.522 KB |
| File type | |
| Number of pages | 9 |
Download Datasheet SIRA26DP-T1-RE3 |
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Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SIRA26DP-T1-RE3
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 43.1W
- Total Gate Charge (Qg@Vgs): 44nC@10V
- Drain Source Voltage (Vdss): 25V
- Input Capacitance (Ciss@Vds): 2247pF@10V
- Continuous Drain Current (Id): 60A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.65mΩ@15A,10V
- Package: PowerPAK-SO-8
- Manufacturer: Vishay Intertech
