BC69-16PA,115 Datasheet

BC869-16,115

Datasheet specifications

Datasheet's name BC869-16,115
File size 54.053 KB
File type pdf
Number of pages 24

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Nexperia BC69-16PA,115
  • Transistor Type: PNP
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 2A
  • Power Dissipation (Pd): 420mW
  • Transition Frequency (fT): 140MHz
  • DC Current Gain (hFE@Ic,Vce): 100@500mA,1V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 20V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@2A,200mA
  • Package: SOT-1061
  • Manufacturer: Nexperia