دیتاشیت FDG6301N
مشخصات دیتاشیت
| نام دیتاشیت |
FDG6301N
|
| حجم فایل |
79.41
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
-
Type:
2 N-Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDG6301N
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
300mW
-
Total Gate Charge (Qg@Vgs):
0.4nC@4.5V
-
Drain Source Voltage (Vdss):
25V
-
Input Capacitance (Ciss@Vds):
9.5pF@10V
-
Continuous Drain Current (Id):
220mA
-
Gate Threshold Voltage (Vgs(th)@Id):
1.5V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
4Ω@220mA,4.5V
-
Package:
SC-70-6
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Manufacturer:
onsemi
