دیتاشیت 3DD13003E1D
مشخصات دیتاشیت
نام دیتاشیت |
3DD13003E1D
|
حجم فایل |
65.323
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
5
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Wuxi China Resources Huajing Microelectronics 3DD13003E1D
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Transistor Type:
1PCSNPN&1PCSPNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
1.3A
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Power Dissipation (Pd):
800mW
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Transition Frequency (fT):
5MHz
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DC Current Gain (hFE@Ic,Vce):
15@200mA,5V
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Collector Cut-Off Current (Icbo):
100uA
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
400mV@500mA,100mA
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Package:
TO-92
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Manufacturer:
Wuxi China Resources Huajing Microelectronics