دیتاشیت BCR 35PN H6327
مشخصات دیتاشیت
| نام دیتاشیت |
BCR 35PN H6327
|
| حجم فایل |
74.337
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Digital Transistors
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Datasheet:
Infineon Technologies BCR 35PN H6327
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Transistor Type:
1 NPN,1 PNP - Pre-Biased
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Collector Current (Ic):
100mA
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Power Dissipation (Pd):
250mW
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Transition Frequency (fT):
150MHz
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DC Current Gain (hFE@Ic,Vce):
70@5mA,5V
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Collector Cut-Off Current (Icbo):
-
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Collector-Emitter Breakdown Voltage (Vceo):
50V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
300mV@10mA,500uA
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Package:
SOT-323-6
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Manufacturer:
Infineon Technologies
