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MMBTA42G-AE3-R Datasheet
Datasheet specifications
| Datasheet's name | MMBTA42G-AE3-R |
|---|---|
| File size | 52.196 KB |
| File type | |
| Number of pages | 4 |
Download Datasheet MMBTA42G-AE3-R |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: UTC(Unisonic Tech) MMBTA42G-AE3-R
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 500mA
- Power Dissipation (Pd): 350mW
- Transition Frequency (fT): 50MHz
- DC Current Gain (hFE@Ic,Vce): 80@10mA,10V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 300V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@20mA,2mA
- Package: SOT-23
- Manufacturer: UTC(Unisonic Tech)
