دیتاشیت MMBTA42G-AE3-R
مشخصات دیتاشیت
| نام دیتاشیت |
MMBTA42G-AE3-R
|
| حجم فایل |
52.196
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
UTC(Unisonic Tech) MMBTA42G-AE3-R
-
Transistor Type:
NPN
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
500mA
-
Power Dissipation (Pd):
350mW
-
Transition Frequency (fT):
50MHz
-
DC Current Gain (hFE@Ic,Vce):
80@10mA,10V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
300V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
200mV@20mA,2mA
-
Package:
SOT-23
-
Manufacturer:
UTC(Unisonic Tech)
