BC856AS-7 Datasheet

BC856AS-7

Datasheet specifications

Datasheet's name BC856AS-7
File size 80.46 KB
File type pdf
Number of pages 6

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Diodes Incorporated BC856AS-7
  • Transistor Type: 2PCSPNP
  • Operating Temperature: -65°C~+150°C@(Tj)
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 200mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 125@2mA,5V
  • Collector Cut-Off Current (Icbo): 15nA
  • Collector-Emitter Breakdown Voltage (Vceo): 65V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@100mA,5mA
  • Package: SOT-363-6(SC-70-6)
  • Manufacturer: Diodes Incorporated

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