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TTC5200(Q) Datasheet
Datasheet specifications
| Datasheet's name | TTC5200(Q) |
|---|---|
| File size | 63.731 KB |
| File type | |
| Number of pages | 5 |
Download Datasheet TTC5200(Q) |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: TOSHIBA TTC5200(Q)
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 15A
- Power Dissipation (Pd): 150W
- Transition Frequency (fT): 30MHz
- DC Current Gain (hFE@Ic,Vce): 80@1A,5V
- Collector Cut-Off Current (Icbo): 5uA
- Collector-Emitter Breakdown Voltage (Vceo): 230V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 3V@8A,800mA
- Package: TO-3P-3
- Manufacturer: TOSHIBA