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2PB710ARL,215 Datasheet
Datasheet specifications
| Datasheet's name | 2PB710ASL,215 |
|---|---|
| File size | 53.308 KB |
| File type | |
| Number of pages | 9 |
Download Datasheet 2PB710ASL,215 |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Nexperia 2PB710ARL,215
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 500mA
- Power Dissipation (Pd): 250mW
- Transition Frequency (fT): 120MHz
- DC Current Gain (hFE@Ic,Vce): 120@150mA,10V
- Collector Cut-Off Current (Icbo): 10nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@300mA,30mA
- Package: SOT-23(TO-236)
- Manufacturer: Nexperia
