30N06L-VB 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec 30N06L-VB
- Power Dissipation (Pd): 3W
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 35A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 31mΩ@10V,15A
- Package: TO-252
- Manufacturer: VBsemi Elec
