PUMD18,115 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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PUMD18,115
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حجم فایل
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51.873
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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17
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Digital Transistors
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Datasheet:
Nexperia PUMD18,115
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Input Resistor:
4.7kΩ
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Resistor Ratio:
2.1
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Transistor Type:
1 NPN - Pre-Biased,1 PNP - Pre-Biased
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
100mA
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Power Dissipation (Pd):
300mW
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Transition Frequency (fT):
230MHz;180MHz
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DC Current Gain (hFE@Ic,Vce):
50@10mA,5V
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Input Voltage (VI(on)@Ic,Vce):
1.5V@20mA,0.3V
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Output Voltage (VO(on)@Io/Ii):
-
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Input Voltage (VI(off)@Ic,Vce):
0.9V@100uA,5V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
50V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
100mV@10mA,0.5mA
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Package:
SOT-363
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Manufacturer:
Nexperia
