دیتاشیت HY1906C2
مشخصات دیتاشیت
| نام دیتاشیت |
HY1906C2
|
| حجم فایل |
66.498
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
HUAYI HY1906C2
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
57.7W
-
Total Gate Charge (Qg@Vgs):
102nC@10V
-
Drain Source Voltage (Vdss):
60V
-
Input Capacitance (Ciss@Vds):
4620pF@25V
-
Continuous Drain Current (Id):
70A
-
Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
360pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
5.7mΩ@10V,20A
-
Package:
DFN-8(5x6)
-
Manufacturer:
HUAYI
