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SUD19P06-60L-E3 Datasheet
Datasheet specifications
| Datasheet's name | SUD19P06-60L-E3 |
|---|---|
| File size | 68.167 KB |
| File type | |
| Number of pages | 6 |
Download Datasheet SUD19P06-60L-E3 |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SUD19P06-60L-E3
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 2.7W;46W
- Total Gate Charge (Qg@Vgs): 40nC@10V
- Input Capacitance (Ciss@Vds): 1710pF@25V
- Continuous Drain Current (Id): 19A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@10A,10V
- Package: TO-252
- Manufacturer: Vishay Intertech
