دیتاشیت HN1A01FE-Y,LF
مشخصات دیتاشیت
نام دیتاشیت |
HN1A01FE-Y,LF
|
حجم فایل |
87.07
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
3
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
TOSHIBA HN1A01FE-Y,LF
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Transistor Type:
2PCSPNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
150mA
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Power Dissipation (Pd):
100mW
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Transition Frequency (fT):
80MHz
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DC Current Gain (hFE@Ic,Vce):
120@2mA,6V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
50V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
100mV@100mA,10mA
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Package:
SOT-666-6
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Manufacturer:
TOSHIBA