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HN1A01FE-Y,LF Datasheet
Datasheet specifications
| Datasheet's name | HN1A01FE-Y,LF |
|---|---|
| File size | 87.07 KB |
| File type | |
| Number of pages | 3 |
Download Datasheet HN1A01FE-Y,LF |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: TOSHIBA HN1A01FE-Y,LF
- Transistor Type: 2PCSPNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 150mA
- Power Dissipation (Pd): 100mW
- Transition Frequency (fT): 80MHz
- DC Current Gain (hFE@Ic,Vce): 120@2mA,6V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 100mV@100mA,10mA
- Package: SOT-666-6
- Manufacturer: TOSHIBA