BC 847B E6327 数据手册

BC 850BW H6327

数据手册规格

数据手册名称 BC 850BW H6327
文件大小 75.285 千字节
文件类型 pdf
页数 13

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技术规格

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Infineon Technologies BC 847B E6327
  • Transistor Type: -
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 330mW
  • Transition Frequency (fT): 250MHz
  • DC Current Gain (hFE@Ic,Vce): 290@2mA,5V
  • Collector Cut-Off Current (Icbo): 15nA
  • Collector-Emitter Breakdown Voltage (Vceo): 45V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@100mA,5mA
  • Package: SOT-23
  • Manufacturer: Infineon Technologies