دیتاشیت BFU590QX
مشخصات دیتاشیت
| نام دیتاشیت |
BFU590Q
|
| حجم فایل |
261.065
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
19
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
NXP Semicon BFU590QX
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Transistor Type:
NPN
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Operating Temperature:
-40°C~+150°C@(Tj)
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Collector Current (Ic):
80mA
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Power Dissipation (Pd):
2W
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Transition Frequency (fT):
8GHz
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DC Current Gain (hFE@Ic,Vce):
95@80mA,8V
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Collector Cut-Off Current (Icbo):
1nA
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Collector-Emitter Breakdown Voltage (Vceo):
12V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
-
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Package:
SOT-89
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Manufacturer:
NXP Semicon
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Voltage - Collector Emitter Breakdown (Max):
12V
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Frequency - Transition:
8GHz
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Noise Figure (dB Typ @ f):
-
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Gain:
6.5dB
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Power - Max:
2W
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DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 80mA, 8V
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Current - Collector (Ic) (Max):
200mA
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Mounting Type:
Surface Mount
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Package / Case:
TO-243AA
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Supplier Device Package:
SOT-89-3
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Base Part Number:
BFU59
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detail:
RF Transistor NPN 12V 200mA 8GHz 2W Surface Mount SOT-89-3
