MMBFJ112 数据手册
其他文档
J111-13, MMBFJ111-13 10 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/JFETs
- FET Type: -
- Datasheet: onsemi MMBFJ112
- Input Capacitance (Ciss@Vds): -
- Total Device Dissipation (Pd): -
- Drain Current (Idss@Vds,Vgs=0): -
- Gate-Source Breakdown Voltage (V(BR)GSS): -
- Gate-Source Cutoff Voltage (VGS(off)@ID): -
- Static Drain-Source On Resistance (RDS(on)): -
- Package: SOT-23-3L
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Voltage - Breakdown (V(BR)GSS): 35V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 50 Ohms
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Base Part Number: MMBFJ1
- detail: JFET N-Channel 35V 350mW Surface Mount SOT-23-3