MMBFJ176 数据手册
其他文档
J175-77,MMBFJ175-77 8 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/JFETs
- FET Type: P-Channel
- Datasheet: onsemi MMBFJ176
- Operating Temperature: -55°C~+150°C@(Tj)
- Input Capacitance (Ciss@Vds): -
- Total Device Dissipation (Pd): 225mW
- Drain Current (Idss@Vds,Vgs=0): 2mA@15V
- Gate-Source Breakdown Voltage (V(BR)GSS): 30V
- Gate-Source Cutoff Voltage (VGS(off)@ID): 1V@10nA
- Static Drain-Source On Resistance (RDS(on)): 250Ω
- Package: SOT-23(TO-236)
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 250 Ohms
- Power - Max: 225mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Base Part Number: MMBFJ1
- detail: JFET P-Channel 30V 225mW Surface Mount SOT-23-3