دیتاشیت 2N7002DW

مشخصات دیتاشیت

دانلود دیتاشیت 2N7002DW Datasheet	2N7002DW Datasheet Datasheet

RoHS: true
Type: 2 N-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Jiangsu Changjing Electronics Technology Co., Ltd. 2N7002DW
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 150mW
Total Gate Charge (Qg@Vgs): -
Drain Source Voltage (Vdss): 60V
Input Capacitance (Ciss@Vds): 50pF@25V
Continuous Drain Current (Id): 115mA
Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds): 5pF@25V
Drain Source On Resistance (RDS(on)@Vgs,Id): 1.1Ω@10V,500mA
Package: SOT-323-6
Manufacturer: Jiangsu Changjing Electronics Technology Co., Ltd.
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88 (SC-70-6)
Base Part Number: 2N7002
detail: Mosfet Array 2 N-Channel (Dual) 60V 115mA 200mW Surface Mount SC-88 (SC-70-6)