دیتاشیت FDC6561AN
مشخصات دیتاشیت
| نام دیتاشیت |
FDC6561AN
|
| حجم فایل |
196.079
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
-
Type:
-
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi FDC6561AN
-
Power Dissipation (Pd):
-
-
Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
-
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
-
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
-
-
Package:
TSOT-26
-
Manufacturer:
onsemi
-
Series:
PowerTrench®
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
2 N-Channel (Dual)
-
FET Feature:
Logic Level Gate
-
Drain to Source Voltage (Vdss):
30V
-
Current - Continuous Drain (Id) @ 25°C:
2.5A
-
Rds On (Max) @ Id, Vgs:
95mOhm @ 2.5A, 10V
-
Vgs(th) (Max) @ Id:
3V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
3.2nC @ 5V
-
Input Capacitance (Ciss) (Max) @ Vds:
220pF @ 15V
-
Power - Max:
700mW
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Surface Mount
-
Package / Case:
SOT-23-6 Thin, TSOT-23-6
-
Supplier Device Package:
SuperSOT™-6
-
Base Part Number:
FDC6561
-
detail:
Mosfet Array 2 N-Channel (Dual) 30V 2.5A 700mW Surface Mount SuperSOT™-6
