دیتاشیت FDS3890
مشخصات دیتاشیت
| نام دیتاشیت |
FDS3890
|
| حجم فایل |
184.875
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
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Type:
2 N-Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDS3890
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
900mW
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Total Gate Charge (Qg@Vgs):
35nC@10V
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Drain Source Voltage (Vdss):
80V
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Input Capacitance (Ciss@Vds):
1180pF@40V
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Continuous Drain Current (Id):
4.7A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
44mΩ@4.7A,10V
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Package:
SOP-8
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Manufacturer:
onsemi
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Series:
PowerTrench®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
2 N-Channel (Dual)
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FET Feature:
Logic Level Gate
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Drain to Source Voltage (Vdss):
80V
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Current - Continuous Drain (Id) @ 25°C:
4.7A
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Rds On (Max) @ Id, Vgs:
44mOhm @ 4.7A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
35nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds:
1180pF @ 40V
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Power - Max:
900mW
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Mounting Type:
Surface Mount
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Package / Case:
8-SOIC (0.154", 3.90mm Width)
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Supplier Device Package:
8-SOIC
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Base Part Number:
FDS38
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detail:
Mosfet Array 2 N-Channel (Dual) 80V 4.7A 900mW Surface Mount 8-SOIC
