دیتاشیت FDS4685
مشخصات دیتاشیت
| نام دیتاشیت |
FDS4685
|
| حجم فایل |
608.38
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDS4685
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
2.5W
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Total Gate Charge (Qg@Vgs):
27nC@5V
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Drain Source Voltage (Vdss):
40V
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Input Capacitance (Ciss@Vds):
1872pF@20V
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Continuous Drain Current (Id):
8.2A
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Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
27mΩ@10V,8.2A
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Package:
SOP-8
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Manufacturer:
onsemi
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Series:
PowerTrench®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
40V
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Current - Continuous Drain (Id) @ 25°C:
8.2A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
27mOhm @ 8.2A, 10V
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Vgs(th) (Max) @ Id:
3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
27nC @ 5V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
1872pF @ 20V
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FET Feature:
-
-
Power Dissipation (Max):
2.5W (Ta)
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Mounting Type:
Surface Mount
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Supplier Device Package:
8-SOIC
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Package / Case:
8-SOIC (0.154", 3.90mm Width)
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Base Part Number:
FDS46
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detail:
P-Channel 40V 8.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
