دیتاشیت MMBT5401LT1G

مشخصات دیتاشیت

دانلود دیتاشیت MMBT,NSV,SMMBT5401LT1,3	MMBT,NSV,SMMBT5401LT1,3 Datasheet

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi MMBT5401LT1G
Transistor Type: PNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 500mA
Power Dissipation (Pd): 300mW
Transition Frequency (fT): 300MHz
DC Current Gain (hFE@Ic,Vce): 60@10mA,5V
Collector Cut-Off Current (Icbo): 50nA
Collector-Emitter Breakdown Voltage (Vceo): 150V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@5mA,50mA
Package: SOT-23(TO-236)
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 300mW
Frequency - Transition: 300MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBT5401
detail: Bipolar (BJT) Transistor PNP 150V 500mA 300MHz 300mW Surface Mount SOT-23-3 (TO-236)