دیتاشیت KST10MTF
مشخصات دیتاشیت
نام دیتاشیت |
KST10
|
حجم فایل |
274.322
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
5
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi KST10MTF
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Transistor Type:
NPN
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Transition Frequency (fT):
650MHz
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DC Current Gain (hFE@Ic,Vce):
60@4mA,10V
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Collector-Emitter Breakdown Voltage (Vceo):
25V
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Package:
SOT-23-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Voltage - Collector Emitter Breakdown (Max):
25V
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Frequency - Transition:
650MHz
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Noise Figure (dB Typ @ f):
-
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Gain:
-
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Power - Max:
350mW
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DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 4mA, 10V
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Current - Collector (Ic) (Max):
-
-
Operating Temperature:
-
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Mounting Type:
Surface Mount
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Supplier Device Package:
SOT-23-3
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Base Part Number:
KST10
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detail:
RF Transistor NPN 25V 650MHz 350mW Surface Mount SOT-23-3