دیتاشیت NDS356AP
مشخصات دیتاشیت
| نام دیتاشیت |
NDS356AP
|
| حجم فایل |
158.219
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
-
Type:
P Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi NDS356AP
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
500mW
-
Total Gate Charge (Qg@Vgs):
4.4nC@5V
-
Drain Source Voltage (Vdss):
30V
-
Input Capacitance (Ciss@Vds):
280pF@10V
-
Continuous Drain Current (Id):
1.1A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.5V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
200mΩ@10V,1.3A
-
Package:
SOT-23(TO-236)
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
P-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
30V
-
Current - Continuous Drain (Id) @ 25°C:
1.1A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
-
Rds On (Max) @ Id, Vgs:
200mOhm @ 1.3A, 10V
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
4.4nC @ 5V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
280pF @ 10V
-
FET Feature:
-
-
Power Dissipation (Max):
500mW (Ta)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
SuperSOT-3
-
Package / Case:
TO-236-3, SC-59, SOT-23-3
-
Base Part Number:
NDS356
