دیتاشیت FJP13009H2TU
مشخصات دیتاشیت
| نام دیتاشیت |
FJP13009
|
| حجم فایل |
289.732
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi FJP13009H2TU
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
12A
-
Power Dissipation (Pd):
100W
-
Transition Frequency (fT):
4MHz
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DC Current Gain (hFE@Ic,Vce):
15@5A,5V
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Collector Cut-Off Current (Icbo):
-
-
Collector-Emitter Breakdown Voltage (Vceo):
400V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
3V@12A,3A
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Package:
TO-220
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Tube
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Part Status:
Active
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Current - Collector (Ic) (Max):
12A
-
Voltage - Collector Emitter Breakdown (Max):
400V
-
Vce Saturation (Max) @ Ib, Ic:
3V @ 3A, 12A
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Current - Collector Cutoff (Max):
-
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 5A, 5V
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Power - Max:
100W
-
Frequency - Transition:
4MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-220-3
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Supplier Device Package:
TO-220-3
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Base Part Number:
FJP13009
