دیتاشیت FJP13009H2TU

FJP13009

مشخصات دیتاشیت

نام دیتاشیت FJP13009
حجم فایل 289.732 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

دانلود دیتاشیت FJP13009

FJP13009 Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi FJP13009H2TU
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 12A
  • Power Dissipation (Pd): 100W
  • Transition Frequency (fT): 4MHz
  • DC Current Gain (hFE@Ic,Vce): 15@5A,5V
  • Collector Cut-Off Current (Icbo): -
  • Collector-Emitter Breakdown Voltage (Vceo): 400V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 3V@12A,3A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • Current - Collector (Ic) (Max): 12A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
  • Power - Max: 100W
  • Frequency - Transition: 4MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
  • Base Part Number: FJP13009