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- دیتاشیت KSD880YTU
دیتاشیت KSD880YTU
مشخصات دیتاشیت
| نام دیتاشیت | KSD880YTU |
|---|---|
| حجم فایل | 70.016 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 6 |
KSD880YTU |
دانلود دیتاشیت |
|---|
سایر مستندات
TO220B03 Pkg Drawing 1 pages
KSD880 6 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi KSD880YTU
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 3A
- Power Dissipation (Pd): 30W
- Transition Frequency (fT): 3MHz
- DC Current Gain (hFE@Ic,Vce): 100@500mA,5V
- Collector Cut-Off Current (Icbo): 100uA
- Collector-Emitter Breakdown Voltage (Vceo): 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@3A,300mA
- Package: TO-220
- Manufacturer: onsemi
- Series: -
- Packaging: Bulk
- Part Status: Obsolete
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
- Power - Max: 30W
- Frequency - Transition: 3MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Base Part Number: KSD880
- detail: Bipolar (BJT) Transistor NPN 60V 3A 3MHz 30W Through Hole TO-220-3