دیتاشیت MJ15016G

مشخصات دیتاشیت

دانلود دیتاشیت 2N3055A, MJ15015,16	2N3055A, MJ15015,16 Datasheet

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi MJ15016G
Transistor Type: PNP
Operating Temperature: -65°C~+200°C@(Tj)
Collector Current (Ic): 15A
Power Dissipation (Pd): 115W
Transition Frequency (fT): 18MHz
DC Current Gain (hFE@Ic,Vce): 10@4A,2V
Collector Cut-Off Current (Icbo): 100uA
Collector-Emitter Breakdown Voltage (Vceo): 120V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 5V@7A,15A
Package: TO-204
Manufacturer: onsemi
Series: -
Packaging: Tray
Part Status: Active
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 5V @ 7A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 2V
Power - Max: 115W
Frequency - Transition: 18MHz
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204 (TO-3)
Base Part Number: MJ150
detail: Bipolar (BJT) Transistor PNP 120V 15A 18MHz 115W Through Hole TO-204 (TO-3)