دیتاشیت FDS4501H
مشخصات دیتاشیت
| نام دیتاشیت |
FDS4501H
|
| حجم فایل |
1536.635
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
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RoHS:
true
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Type:
-
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDS4501H
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Power Dissipation (Pd):
-
-
Total Gate Charge (Qg@Vgs):
-
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Drain Source Voltage (Vdss):
-
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
-
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
-
-
Package:
SO-8
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Manufacturer:
onsemi
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Series:
PowerTrench®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N and P-Channel
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FET Feature:
Logic Level Gate
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Drain to Source Voltage (Vdss):
30V, 20V
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Current - Continuous Drain (Id) @ 25°C:
9.3A, 5.6A
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Rds On (Max) @ Id, Vgs:
18mOhm @ 9.3A, 10V
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Vgs(th) (Max) @ Id:
3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
27nC @ 4.5V
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Input Capacitance (Ciss) (Max) @ Vds:
1958pF @ 10V
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Power - Max:
1W
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Package / Case:
8-SOIC (0.154", 3.90mm Width)
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Supplier Device Package:
8-SOIC
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Base Part Number:
FDS45
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detail:
Mosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1W Surface Mount 8-SOIC
