دیتاشیت FDD3670
مشخصات دیتاشیت
| نام دیتاشیت |
FDD3670
|
| حجم فایل |
448.746
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDD3670
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
3.8W;83W
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Total Gate Charge (Qg@Vgs):
80nC@10V
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Drain Source Voltage (Vdss):
100V
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Input Capacitance (Ciss@Vds):
2490pF@50V
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Continuous Drain Current (Id):
34A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
32mΩ@7.3A,10V
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Package:
TO-252
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Manufacturer:
onsemi
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Series:
PowerTrench®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
100V
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Current - Continuous Drain (Id) @ 25°C:
34A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
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Rds On (Max) @ Id, Vgs:
32mOhm @ 7.3A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
80nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
2490pF @ 50V
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FET Feature:
-
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Power Dissipation (Max):
3.8W (Ta), 83W (Tc)
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Mounting Type:
Surface Mount
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Supplier Device Package:
TO-252
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Part Number:
FDD367
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detail:
N-Channel 100V 34A (Ta) 3.8W (Ta), 83W (Tc) Surface Mount TO-252
