دیتاشیت MMBT6517LT1G
مشخصات دیتاشیت
| نام دیتاشیت |
MMBT6517LT1, 3
|
| حجم فایل |
122.578
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Obsolete
-
Transistor Type:
NPN
-
Current - Collector (Ic) (Max):
100mA
-
Voltage - Collector Emitter Breakdown (Max):
350V
-
Vce Saturation (Max) @ Ib, Ic:
1V @ 5mA, 50mA
-
Current - Collector Cutoff (Max):
50nA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 50mA, 10V
-
Power - Max:
225mW
-
Frequency - Transition:
200MHz
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Surface Mount
-
Package / Case:
TO-236-3, SC-59, SOT-23-3
-
Supplier Device Package:
SOT-23-3 (TO-236)
-
Base Part Number:
MMBT6517
-
detail:
Bipolar (BJT) Transistor NPN 350V 100mA 200MHz 225mW Surface Mount SOT-23-3 (TO-236)
