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دیتاشیت IXTQ50N20P
مشخصات دیتاشیت
| نام دیتاشیت | IXT(A,P,Q)50N20P | 
|---|---|
| حجم فایل | 164.486 کیلوبایت | 
| نوع فایل | |
| تعداد صفحات | 6 | 
														دانلود دیتاشیت IXT(A,P,Q)50N20P | 
													IXT(A,P,Q)50N20P Datasheet | 
|---|
مشخصات
- Manufacturer: IXYS
 - Series: PolarHT™
 - Packaging: Tube
 - Part Status: Active
 - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 200V
 - Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
 - Drive Voltage (Max Rds On, Min Rds On): 10V
 - Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 10V
 - Vgs(th) (Max) @ Id: 5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
 - Vgs (Max): ±20V
 - Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
 - FET Feature: -
 - Power Dissipation (Max): 360W (Tc)
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-3P
 - Package / Case: TO-3P-3, SC-65-3
 - detail: N-Channel 200V 50A (Tc) 360W (Tc) Through Hole TO-3P