CSD16301Q2 دیتاشیت

CSD16301Q2

مشخصات دیتاشیت

نام دیتاشیت CSD16301Q2
حجم فایل 92.479 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

مشاهده دیتاشیت CSD16301Q2

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سایر مستندات

CSD16301Q2 13 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD16301Q2
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2.3W
  • Total Gate Charge (Qg@Vgs): 2.8nC@4.5V
  • Drain Source Voltage (Vdss): 25V
  • Input Capacitance (Ciss@Vds): 340pF@12.5V
  • Continuous Drain Current (Id): 5A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.55V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 24mΩ@8V,4A
  • Package: WSON-6(2x2)
  • Manufacturer: Texas Instruments
  • Packaging: Cut Tape (CT)
  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 25V
  • Technology: MOSFET (Metal Oxide)
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
  • Base Part Number: CSD1630
  • Package / Case: 6-SMD, Flat Leads
  • Series: NexFET™
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Vgs (Max): +10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 12.5V
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 4A, 8V
  • FET Feature: -
  • Supplier Device Package: 6-SON
  • Vgs(th) (Max) @ Id: 1.55V @ 250µA
  • Part Status: Active
  • Mounting Type: Surface Mount
  • Power Dissipation (Max): 2.3W (Ta)
  • detail: N-Channel 25V 5A (Tc) 2.3W (Ta) Surface Mount 6-SON

محصولات مشابه