دیتاشیت CSD18534Q5A

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CSD18534Q5A	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD18534Q5A
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 3.1W;77W
Total Gate Charge (Qg@Vgs): 22nC@10V
Drain Source Voltage (Vdss): 60V
Input Capacitance (Ciss@Vds): 1770pF@30V
Continuous Drain Current (Id): 13A;50A
Gate Threshold Voltage (Vgs(th)@Id): 2.3V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 9.8mΩ@10V,14A
Package: VSONP-8
Manufacturer: Texas Instruments
Power Dissipation (Max): 3.1W (Ta), 77W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 30V
Vgs (Max): ±20V
Supplier Device Package: 8-VSONP (5x6)
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Base Part Number: CSD1853
Vgs(th) (Max) @ Id: 2.3V @ 250µA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
FET Feature: -
Package / Case: 8-PowerTDFN
Part Status: Active
Series: NexFET™
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss): 60V
detail: N-Channel 60V 13A (Ta), 50A (Tc) 3.1W (Ta), 77W (Tc) Surface Mount 8-VSONP (5x6)