STW3N150 Datasheet
Datasheet specifications
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Datasheet's name
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STW3N150
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File size
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69.999
KB
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File type
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pdf
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Number of pages
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23
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Technical specifications
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STW3N150
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Power Dissipation (Pd):
140W
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Total Gate Charge (Qg@Vgs):
29.3nC@10V
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Drain Source Voltage (Vdss):
1.5kV
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Input Capacitance (Ciss@Vds):
939pF@25V
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Continuous Drain Current (Id):
2.5A
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Gate Threshold Voltage (Vgs(th)@Id):
5V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
9Ω@10V,1.3A
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Package:
TO-247
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Manufacturer:
STMicroelectronics
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Series:
PowerMESH™
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
1500V
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Current - Continuous Drain (Id) @ 25°C:
2.5A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
9Ohm @ 1.3A, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
29.3nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
939pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
140W (Tc)
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-247-3
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Package / Case:
TO-247-3
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Base Part Number:
STW3N
