STx3N150 Datasheet

STx3N150

Datasheet specifications

Datasheet's name STx3N150
File size 688.675 KB
File type pdf
Number of pages 22

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STW3N150 23 pages

Technical specifications

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STFW3N150
  • Power Dissipation (Pd): 63W
  • Total Gate Charge (Qg@Vgs): 29.3nC@10V
  • Drain Source Voltage (Vdss): 1.5kV
  • Input Capacitance (Ciss@Vds): 939pF@25V
  • Continuous Drain Current (Id): 2.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9Ω@10V,1.3A
  • Package: TO-3PF
  • Manufacturer: STMicroelectronics
  • Series: PowerMESH™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOWATT-218FX
  • Package / Case: ISOWATT218FX
  • Base Part Number: STFW
  • detail: N-Channel 1500V 2.5A (Tc) 63W (Tc) Through Hole ISOWATT-218FX

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