دیتاشیت STGD18N40LZT4
مشخصات دیتاشیت
| نام دیتاشیت |
STGx18N40LZ
|
| حجم فایل |
909.306
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
25
|
مشخصات
-
RoHS:
true
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Type:
-
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
STMicroelectronics STGD18N40LZT4
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Operating Temperature:
-55°C~+175°C@(Tj)
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Collector Current (Ic):
25A
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Power Dissipation (Pd):
125W
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Turn?on Delay Time (Td(on)):
650ns
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Input Capacitance (Cies@Vce):
-
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Turn?on Switching Loss (Eon):
-
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Total Gate Charge (Qg@Ic,Vge):
29nC
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Turn?off Delay Time (Td(off)):
13.5us
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Pulsed Collector Current (Icm):
40A
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Collector-Emitter Breakdown Voltage (Vces):
420V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
1.7V@4.5V,10A
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Package:
TO-252
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Manufacturer:
STMicroelectronics
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Series:
Automotive, AEC-Q101, PowerMESH™
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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IGBT Type:
-
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Voltage - Collector Emitter Breakdown (Max):
420V
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Current - Collector (Ic) (Max):
25A
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Current - Collector Pulsed (Icm):
40A
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Vce(on) (Max) @ Vge, Ic:
1.7V @ 4.5V, 10A
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Power - Max:
125W
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Switching Energy:
-
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Input Type:
Logic
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Gate Charge:
29nC
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Td (on/off) @ 25°C:
650ns/13.5µs
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Test Condition:
300V, 10A, 5V
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Mounting Type:
Surface Mount
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Supplier Device Package:
DPAK
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Base Part Number:
STGD18
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detail:
IGBT 420V 25A 125W Surface Mount DPAK
