دیتاشیت BC550CTA
مشخصات دیتاشیت
| نام دیتاشیت |
BC546-50
|
| حجم فایل |
322.43
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi BC550CTA
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
100mA
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Power Dissipation (Pd):
500mW
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Transition Frequency (fT):
300MHz
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DC Current Gain (hFE@Ic,Vce):
420@2mA,5V
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Collector Cut-Off Current (Icbo):
15nA
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Collector-Emitter Breakdown Voltage (Vceo):
45V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
250mV@100mA,5mA
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Package:
TO-92-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tape & Box (TB)
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Part Status:
Active
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Current - Collector (Ic) (Max):
100mA
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Voltage - Collector Emitter Breakdown (Max):
45V
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Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
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Current - Collector Cutoff (Max):
15nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
420 @ 2mA, 5V
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Power - Max:
500mW
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Frequency - Transition:
300MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Supplier Device Package:
TO-92-3
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Base Part Number:
BC550
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detail:
Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 500mW Through Hole TO-92-3
