BC847BPDW1T1G دیتاشیت

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دانلود دیتاشیت BC847BPDW1T1G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi BC847BPDW1T1G
Transistor Type: 1PCSNPN&1PCSPNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 100mA
Power Dissipation (Pd): 380mW
Transition Frequency (fT): 100MHz
DC Current Gain (hFE@Ic,Vce): 200@2mA,5V
Collector Cut-Off Current (Icbo): 15nA
Collector-Emitter Breakdown Voltage (Vceo): 45V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@5mA,100mA
Package: SOT-323-6
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 380mW
Frequency - Transition: 100MHz
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Base Part Number: BC847
detail: Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363