دیتاشیت FDN359BN
مشخصات دیتاشیت
| نام دیتاشیت |
FDN359BN
|
| حجم فایل |
220.812
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDN359BN
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Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
500mW
-
Total Gate Charge (Qg@Vgs):
7nC@5V
-
Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
650pF@15V
-
Continuous Drain Current (Id):
2.7A
-
Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
46mΩ@10V,2.7A
-
Package:
SOT-23(TO-236)
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Manufacturer:
onsemi
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Series:
PowerTrench®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
46mOhm @ 2.7A, 10V
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Vgs(th) (Max) @ Id:
3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
7nC @ 5V
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Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
650pF @ 15V
-
FET Feature:
-
-
Power Dissipation (Max):
500mW (Ta)
-
Mounting Type:
Surface Mount
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Supplier Device Package:
SuperSOT-3
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Base Part Number:
FDN359
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detail:
N-Channel 30V 2.7A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
