دیتاشیت FDC645N
مشخصات دیتاشیت
| نام دیتاشیت |
FDC645N
|
| حجم فایل |
198.331
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDC645N
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
1.6W
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Total Gate Charge (Qg@Vgs):
21nC@4.5V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
1460pF@15V
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Continuous Drain Current (Id):
5.5A
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Gate Threshold Voltage (Vgs(th)@Id):
2V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
26mΩ@6.2A,10V
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Package:
TSOT-23-6
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Manufacturer:
onsemi
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Series:
PowerTrench®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
5.5A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
26mOhm @ 6.2A, 10V
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Vgs(th) (Max) @ Id:
2V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
21nC @ 4.5V
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Vgs (Max):
±12V
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Input Capacitance (Ciss) (Max) @ Vds:
1460pF @ 15V
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FET Feature:
-
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Power Dissipation (Max):
1.6W (Ta)
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Mounting Type:
Surface Mount
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Supplier Device Package:
SuperSOT™-6
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Package / Case:
SOT-23-6 Thin, TSOT-23-6
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Base Part Number:
FDC645
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detail:
N-Channel 30V 5.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
