دیتاشیت FDS6679

FDS6679

مشخصات دیتاشیت

نام دیتاشیت FDS6679
حجم فایل 215.068 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

دانلود دیتاشیت FDS6679

FDS6679 Datasheet

مشخصات

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Power Dissipation (Pd): 2.5W
  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 13A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9mΩ@10V,13A
  • Package: SOP-8
  • Manufacturer: onsemi
  • Series: PowerTrench®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 3939pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Base Part Number: FDS66
  • detail: P-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOIC