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- دیتاشیت MJE15030G
دیتاشیت MJE15030G
مشخصات دیتاشیت
| نام دیتاشیت | MJE15030G |
|---|---|
| حجم فایل | 86.125 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 7 |
MJE15030G |
دانلود دیتاشیت |
|---|
سایر مستندات
MJE15028, 29, 30, 31 6 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi MJE15030G
- Transistor Type: NPN
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 8A
- Power Dissipation (Pd): 50W
- Transition Frequency (fT): 30MHz
- DC Current Gain (hFE@Ic,Vce): 20@4A,2V
- Collector Cut-Off Current (Icbo): 100uA
- Collector-Emitter Breakdown Voltage (Vceo): 150V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@1A,100mA
- Package: TO-220
- Manufacturer: onsemi
- Series: -
- Packaging: Tube
- Part Status: Obsolete
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
- Power - Max: 50W
- Frequency - Transition: 30MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Base Part Number: MJE15
- detail: Bipolar (BJT) Transistor NPN 150V 8A 30MHz 50W Through Hole TO-220AB