دیتاشیت FDD6630A
مشخصات دیتاشیت
| نام دیتاشیت |
FDD6630A
|
| حجم فایل |
360.151
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDD6630A
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
28W
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Total Gate Charge (Qg@Vgs):
7nC@5V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
462pF@15V
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Continuous Drain Current (Id):
21A
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Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
35mΩ@10V,7.6A
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Package:
TO-252
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Manufacturer:
onsemi
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Series:
PowerTrench®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
21A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
35mOhm @ 7.6A, 10V
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Vgs(th) (Max) @ Id:
3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
7nC @ 5V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
462pF @ 15V
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FET Feature:
-
-
Power Dissipation (Max):
28W (Ta)
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Mounting Type:
Surface Mount
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Supplier Device Package:
TO-252
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Part Number:
FDD663
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detail:
N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-252
