دیتاشیت MJD253T4G
مشخصات دیتاشیت
| نام دیتاشیت |
MJD243,253
|
| حجم فایل |
109.881
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MJD253T4G
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Transistor Type:
PNP
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
4A
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Power Dissipation (Pd):
1.4W
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Transition Frequency (fT):
40MHz
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DC Current Gain (hFE@Ic,Vce):
40@200mA,1V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
100V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
600mV@1A,100mA
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Package:
TO-252
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
4A
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Voltage - Collector Emitter Breakdown (Max):
100V
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Vce Saturation (Max) @ Ib, Ic:
600mV @ 100mA, 1A
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 200mA, 1V
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Power - Max:
1.4W
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Frequency - Transition:
40MHz
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Mounting Type:
Surface Mount
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Supplier Device Package:
DPAK
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Base Part Number:
MJD25
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detail:
Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Surface Mount DPAK
