دیتاشیت 2N5885G
مشخصات دیتاشیت
| نام دیتاشیت |
2N5883-5886
|
| حجم فایل |
96.931
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi 2N5885G
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+200°C@(Tj)
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Collector Current (Ic):
25A
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Power Dissipation (Pd):
200W
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Transition Frequency (fT):
4MHz
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DC Current Gain (hFE@Ic,Vce):
20@10A,4V
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Collector Cut-Off Current (Icbo):
2mA
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Collector-Emitter Breakdown Voltage (Vceo):
60V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
4V@6.25A,25A
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Package:
TO-204
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Tray
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Part Status:
Active
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Current - Collector (Ic) (Max):
25A
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Voltage - Collector Emitter Breakdown (Max):
60V
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Vce Saturation (Max) @ Ib, Ic:
4V @ 6.25A, 25A
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Current - Collector Cutoff (Max):
2mA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 10A, 4V
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Power - Max:
200W
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Frequency - Transition:
4MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-204AA, TO-3
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Supplier Device Package:
TO-204 (TO-3)
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Base Part Number:
2N5885
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detail:
Bipolar (BJT) Transistor NPN 60V 25A 4MHz 200W Through Hole TO-204 (TO-3)
