دیتاشیت BD180G
مشخصات دیتاشیت
| نام دیتاشیت |
BD180
|
| حجم فایل |
86.868
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi BD180G
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Transistor Type:
PNP
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
1A
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Power Dissipation (Pd):
30W
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Transition Frequency (fT):
3MHz
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DC Current Gain (hFE@Ic,Vce):
40@150mA,2V
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Collector Cut-Off Current (Icbo):
1mA
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Collector-Emitter Breakdown Voltage (Vceo):
80V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
800mV@1A,100mA
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Package:
TO-225
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Bulk
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
3A
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Voltage - Collector Emitter Breakdown (Max):
80V
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Vce Saturation (Max) @ Ib, Ic:
800mV @ 100mA, 1A
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Current - Collector Cutoff (Max):
1mA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 150mA, 2V
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Power - Max:
30W
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Frequency - Transition:
3MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-225AA, TO-126-3
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Supplier Device Package:
TO-225AA
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Base Part Number:
BD180
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detail:
Bipolar (BJT) Transistor PNP 80V 3A 3MHz 30W Through Hole TO-225AA
