دیتاشیت FQP4P40
مشخصات دیتاشیت
نام دیتاشیت |
FQP4P40
|
حجم فایل |
1268.302
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
10
|
مشخصات
-
Manufacturer:
ON Semiconductor
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Series:
QFET®
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Packaging:
Tube
-
Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
400V
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Current - Continuous Drain (Id) @ 25°C:
3.5A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
3.1Ohm @ 1.75A, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
23nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
680pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
85W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220-3
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Package / Case:
TO-220-3
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Base Part Number:
FQP4
-
detail:
P-Channel 400V 3.5A (Tc) 85W (Tc) Through Hole TO-220-3