FQP4P40 دیتاشیت

FQP4P40

مشخصات دیتاشیت

نام دیتاشیت FQP4P40
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت FQP4P40

دانلود دیتاشیت

سایر مستندات

TO220B03 Pkg Drawing 1 pages

FQP4P40 10 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQP4P40
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 85W
  • Total Gate Charge (Qg@Vgs): 23nC@10V
  • Drain Source Voltage (Vdss): 400V
  • Input Capacitance (Ciss@Vds): 680pF@25V
  • Continuous Drain Current (Id): 3.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.1Ω@1.75A,10V
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.75A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: FQP4
  • detail: P-Channel 400V 3.5A (Tc) 85W (Tc) Through Hole TO-220-3

محصولات مشابه